Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces

ABSTRACT

Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode. This second electrically insulating layer preferably comprises a composite of a nitride layer and an oxide layer. To increase the effective surface area of the U-shaped electrode, an HSG layer may also be formed on the inner and outer sidewalls of the U-shaped electrode.

RELATED APPLICATIONS

This application is a divisional of prior application Ser. No. 09/1699,034, filed Oct. 27, 2000, now abandoned, which is a continuation-in-part of Ser. No. 09/289,347, filed Apr. 9, 1999, now U.S. Pat. No. 6,214,688, issued Apr. 10, 2001 and which is related to Korean Appn. No. 98-12563, filed Apr. 9, 1998, the disclosures of which are hereby incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to methods of forming integrated circuit devices and, more particularly, to methods of forming integrated circuit capacitors.

BACKGROUND OF THE INVENTION

As DRAMs increase in memory cell density, there is a continuous challenge to maintain sufficiently high storage capacitance within memory cells despite decreasing cell area. Additionally there is a continuing goal to further decrease cell area. Many methods have been proposed to keep the capacitance of such storage capacitors at acceptable levels. One approach is to increase the height of the storage node (electrode of the capacitor). Another approach is to use high dielectric materials such as Ta₂O₅, or BST.

However, there are some problems with the approach to increasing the height of the storage node. For example, if the required height of the storage node is more than 10,000 Å, it becomes very difficult to pattern conductive layers as storage nodes. There are also some problems with using high dielectric materials, such as Ta₂O₅ and BST, as dielectric films. These problems include the complexity of the fabrication process and reduced reliability.

Attempts have been made to address these problems. For example, FIG. 1A shows, in cross-section, a “one cylinder stack” (OCS) structure of a capacitor storage node according to the prior art. As can be seen in FIG. 1A, the cup-shaped storage node has a capacitance of about two times larger than that of a simple stack capacitor structure because both outer and inner surfaces of the node can be utilized as an effective capacitor area. FIG. 1B shows, in cross-section, a simple stacked capacitor with an HSG layer on its surface according to the prior art. The simple stacked capacitor with an HSG layer has a capacitance about two times larger than that of a simple stacked capacitor without an HSG layer. One cylinder stack capacitors with HSG layers on both inner and outer surface also can be formed.

FIGS. 2A-2D are cross-sectional diagrams which illustrate a method of fabricating an OCS capacitor with an HSG layer thereon. Referring now to FIG. 2A, a device isolating layer 12 is formed on a predetermined region of a semiconductor substrate 10 to define active and inactive regions. A gate electrode structure 14 is formed over the semiconductor substrate 10. A gate oxide layer also is disposed between the gate electrode structure 14 and the substrate 10. Source/drain regions 16 are formed in the active region adjacent to the gate electrode layer. An interlayer insulating layer 18 is formed over the semiconductor substrate 10 and the gate electrode structure 14. A contact hole 19 is opened in the interlayer insulating layer 18 to expose one of the source/drain regions 16. A polysilicon layer 20 is used as a storage node. This layer is deposited in the contact hole 19 and over the insulating layer 18. A photoresist layer pattern 22 is formed over the polysilicon layer 20 to define a storage node region. A low temperature oxide layer 24 is deposited over the polysilicon layer 20 (including the photoresist pattern 22) to a thickness of about 2,500 Å.

Referring to FIG. 2B, the low temperature oxide layer 24 is then dry etched to form sidewall spacers 24 a on the lateral edges of the photoresist pattern 22. Using the photoresist pattern 22 and the sidewall spacers 24 a as a mask, a timed etching step is performed on the insulating layer 20 to remove more than half of the original thickness thereof.

The formation of the storage node structure is next addressed and illustrated in FIGS. 2C-2D. After removing the photoresist pattern 22, the polysilicon layer 20 is etched back, using the sidewall spacers 24 a as a mask, to form the storage node structure 20 a, as shown in FIG. 2D. Subsequently, an HSG layer (not shown) is formed on the surfaces of the storage node 20 a. A dielectric film and top plate are then formed on the storage node 20 a using conventional techniques.

The above-described method has some drawbacks. For example, the timed etch conducted on the insulating layer may not provide process reliability, and the polymer resulting from the etch back may contaminate the storage node which affects the dielectric characteristics. The etch back using the sidewall spacers as a mask also may cause a variation in storage node thickness. Moreover, since the thickness of the top portion of the storage node is less than 1,000 Å, the storage node may fall down during a cleaning process and the HSG formation thereon may totally consume the storage node and cause it to break off.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide improved methods of forming integrated circuit capacitors and capacitors formed thereby.

It is another object of the present invention to provide methods of forming integrated circuit capacitors having high capacitance and capacitors formed thereby.

These and other objects, features and advantages of the present invention are provided by methods of forming integrated circuit capacitors that include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode. This second electrically insulating layer preferably comprises a composite of a nitride layer and an oxide layer. To increase the effective surface area of the U-shaped electrode, an HSG layer may also be formed on the inner and outer sidewalls of the U-shaped electrode. According to another aspect of the present invention, the planarization step may be preceded by the step of forming a fourth electrically insulating layer on the conductive layer. In this case, the planarization step will include the step of planarizing the fourth electrically insulating layer and the conductive layer to define a U-shaped electrode in the contact hole. To complete the capacitor, steps may also be performed to form a capacitor dielectric layer on the U-shaped electrode and on the second electrically insulating layer and then form an upper capacitor electrode on the capacitor dielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view of an electrode of a capacitor according to the prior art.

FIG. 1B is a cross-sectional view of an electrode of a capacitor according to the prior art.

FIGS. 2A-2D are cross-sectional views of intermediate structures that illustrate methods of forming electrodes of capacitors according to the prior art.

FIGS. 3A-3I are cross-sectional views of intermediate structures that illustrate preferred methods of forming integrated circuit capacitors according to an embodiment of the present invention.

FIGS. 4A-4F are cross-sectional views of intermediate structures that illustrate methods of forming integrated circuit capacitors according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

Referring now to FIG. 3A, a cross-sectional view of a semiconductor substrate 100 with a gate electrode structure 104 on its surface is provided. A device isolation layer 102 (e.g., a field oxide layer) is formed on a predetermined area of the semiconductor substrate 100 to define active and inactive regions therein. The gate electrode structure 104 is formed on the active region and a gate oxide layer extends therebetween. Source/drain regions 106 are formed adjacent to the gate electrode structure 104 by implanting impurities into the substrate 100.

A first insulating layer 108 (e.g., an oxide layer) is formed over the semiconductor substrate 100 and over the gate electrode structure 104. The first insulating layer 108 is then etched to form a contact hole 110 therein. This contact hole 110 exposes one of the source/drain regions 106. A first conductive material (e.g., a polysilicon layer 112) is deposited in the contact hole 110 and over the first insulating layer 108 using a chemical vapor deposition (CVD) method. In order to provide a good ohmic contact to the source/drain regions 106, the conductive material may be heavily doped. The doping method may include depositing an in-situ doped polysilicon layer, such as by LPCVD and adding phosphine(PH₃) to the CVD reactant gas (e.g., SiH₄). Alternatively, the polysilicon layer 112 can be deposited undoped and then impurities can be implanted.

Referring to FIG. 3B, a planarization process is performed on the polysilicon layer 112 to form a contact plug 112 a in the contact hole 110. The planarization process may be a CMP or plasma etch-back process. The plasma etch-back may use a CF-based etch gas using CF₄, C₂F₆, C₃F₈, CH₂F₂, CHF₃, or SF₆, or combinations thereof.

Referring now to FIG. 3C, a second insulating layer 114, comprising a silicon nitride layer 114 a and an HTO layer 114 b, is deposited over the first insulating layer 108 and contact plug 112 a. A third insulating layer 116, comprising a first PECVD oxide layer 116, is then deposited over the HTO layer 114 b. The silicon nitride layer 114 a is deposited to a thickness of about 70 Å and serves as an etch stop layer during the subsequent step of etching the first PECVD oxide 116. The HTO layer 114 b is deposited to a thickness of about 500 Å to 1,500 Å. This HTO layer 114 b is provided to serve as an etch stop layer during the step of removing the first PECVD layer 116. As described hereinbelow, the HTO layer 114 b can also be used to support a storage electrode of a capacitor. The first PECVD oxide layer 116 may have a thickness of about 5,000 Å.

Referring to FIG. 3D, a photoresist layer pattern (not shown) is deposited over the first PECVD oxide layer 116. The first PECVD oxide layer 116, the HTO layer 114 b, and the nitride layer 114 a are then selectively etched to form an opening 118. The opening 118 exposes the contact plug 112 a and surrounding portions of the first insulating layer 108. Here, the nitride layer 114 a serves as an etch stop layer during this etching step.

Referring now to FIG. 3E, a second conductive layer 120 (used as storage node) is deposited in the opening 118 and over the first PECVD oxide layer 116. The second conductive layer 120 is preferably made of polysilicon and is deposited to a thickness less than half of the opening width and preferably to a thickness of about 200 Å to 2000 Å.

Referring to FIG. 3F, a fourth insulating layer 122 (such as a photoresist layer or an SOG layer) is deposited in the remaining space in the opening 118 and over the polysilicon layer 120 to a thickness of about 100 Å to 10,000 Å. This fourth insulating layer 122 serves a dual purpose of preventing particle impaction (such as polymer) within the opening during the step of removing the polysilicon layer outside of the opening 118 and protecting the polysilicon layer 120 within the opening.

Referring to FIG. 3G, the fourth insulating layer 122 and the polysilicon layer 120 are then etched back (at an etch ratio of about 1:1) until a top surface of the first PECVD oxide layer 116 is exposed. This etch-back step results in the formation of a cup-shaped storage node 120 a.

The fourth insulating layer 122 a remaining in the opening 118 and the first PECVD oxide layer 116 outside of the opening then are removed, as shown in FIG. 3H. If the fourth insulating layer 122 a is a photoresist layer, the first PECVD oxide layer 116 is removed following the removal of the photoresist layer 112 a from the opening. In this case, the photoresist layer is removed by ashing and the first PECVD oxide layer 116 is removed by wet etching in a BOE solution. On the other hand, if the fourth insulating layer 122 a is an SOG layer, the SOG layer remaining in the cup-shaped storage node 120 a and the first PECVD oxide layer 116 are removed at the same time by wet etching in a BOE solution or dry etching. During these etching steps, the HTO layer 114 b serves as an etch stop layer since the first PECVD oxide layer 116 has a high etch selectivity (the etch ratio of the first PECVD oxide layer and HTO layer is about 4:1). The remaining HTO layer 114 b and the remaining nitride layer 114 a also serve the purpose of supporting the cup-shaped storage node 120 a during back-end processing.

To increase the surface area of the capacitor, a rough conductive layer such as an HSG layer 124 then is formed on the surface of the capacitor by well-known conventional methods as shown in FIG. 31. Next, conventional processes for forming a dielectric film and an upper capacitor electrode are carried out to form a complete capacitor structure.

In view of FIGS. 4A-4F another embodiment of the present invention will now be described. As can been seen from FIG. 4A, a second electrically insulating layer 200 comprising a silicon nitride layer 200 a and a first oxide layer 200 b is deposited over a first insulating layer 108. An etch stop layer 204 comprising Ta₂O₅ is deposited over the second insulating layer 200. Above the etch stop layer 204, a third insulating layer 206 comprising a second oxide layer is deposited. In the present invention, the first oxide layer 200 b and second oxide layer 206 can be a PECVD oxide layer or different types of oxide layer may be used, in addition, the first oxide layer 200 b and the second oxide layer 206 may be different types of oxide. The silicon nitride layer 200 a is deposited in a thickness of at least 20 Å, but preferably in a range between 20 to 300 Å. The first oxide layer 200 b is deposited in a thickness about 500 Å to 5,000 Å, and the second oxide layer 206 has a thickness up to 15,000 Å. The etch stop layer 204 is deposited in a thickness of at least 5 Å, but preferably between 5 to 300 Å. The etch stop layer 204 serves as the etch stop layer during the step of removing the second oxide layer 206. In this embodiment, the first oxide layer 200 b and stop etch layer 204 serve to support a storage electrode of a capacitor.

Referring to FIG. 4B, a photoresist layer pattern (not shown) is deposited over the second oxide layer 206. The first and second oxide layers 200 b, 206, and the etch stop layer 204 are selectively dry etched to form an opening 208. Similarly as in the first embodiment described above, the silicon nitride layer 200 a serves as an etch stop layer during a subsequent step of etching (dry etch) the first and second oxide layer 200 b, 206. It should be noted that a selective portion of the etch stop layer 204 (Ta₂O₅) is also etched at this point because the etch stop layer 204 has a similar etch selectivity (etch ratio of 1:1) as with the first and second oxide layers 200 b, 206. The opening 208 exposes a contact plug 112 a and surrounding portions of a first insulating layer 108.

Referring to FIG. 4C, a second conductive layer 210 (which will be used as a storage node) is deposited in the opening 208 over the second oxide layer 206. The second conductive layer 210 is preferably polysilicon and is deposited to a thickness of less than half of the opening's width, and preferably to a thickness of about 200 Å to 2000 Å.

Referring to FIG. 4D, a fourth insulating layer 212 (a photoresist layer or an SOG layer) is deposited in the remaining space of the opening 208 and over the second conductive layer 210 at a thickness of 100 Å to 10,000 Å. The fourth insulating layer 212 serves the dual purpose of preventing particle impaction (such as polymer) within the opening 208 during the step of removing the second conductive layer 210 outside of the opening 208 and protecting the second conductive layer 210 within the opening 208.

Referring to FIG. 4E, the fourth insulating layer 212 and the second conductive layer 210 are then wet etched back (at an etch ratio of about 1:1) until a top surface of the second oxide layer 206 is exposed. This etch-back step results in the formation of a cup-shaped storage node 210 a.

The fourth insulating layer 212 a remaining in the opening 208 and the second oxide layer 206 outside of the opening 208 are then removed, as shown in FIG. 4F. If the fourth insulating layer 212 a is a photoresist layer, the second oxide layer 206 is removed following the removal of the photoresist layer 212 a from the opening 208. In this case, the photoresist layer 212 a is removed by ashing and the second oxide layer 206 is removed by wet etching In a BOE solution. On the other hand, if the fourth insulating layer 212 a is an SOG layer, the SOG layer 212 a remaining in the sup-shaped storage node 210 a and the second oxide layer 206 are removed at the same time by wet etching in a BOE solution. During these etching steps, the etch stop layer 204 serves as an etch stop layer since the second oxide layer 206 has a high etch selectivity (etch ratio of >100:1) as compared to the etch stop layer 204 (Ta₂ O₅) (during the wet etch). The first oxide layer 200 b and remaining nitride layer 200 a also serve the purpose of supporting the cup-shaped storage node during the back-end processing.

In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims. 

1. A DRAM cell capacitor comprising: a semiconductor substrate having a planar first insulating layer thereover, said first insulating layer having a buried contact plug to an active area of said semiconductor substrate; a cup-shaped storage node electrically connected to said contact plug; said cup-shaped storage node having a bottom portion with a predetermined length and thickness and lateral edges, and a pair of substantially vertical portions having a predetermined height and thickness, lateral edges of each said vertical portions being aligned with one of lateral edges of the bottom portion, respectively, said bottom portion being disposed over said contact plug and overlapping a portion of said first insulating layer outside of said contact plug; a planar second insulating layer formed over said first insulating layer and on lateral edges of said vertical portions of said storage node with a relatively low height than that of said vertical portions; and a rough layer on inner and outer surfaces of said cup-shaped storage node; wherein said second insulating layer is made by laminating a silicon nitride layer and an HTO layer so that both said silicon nitride layer and said HTO layer provide lateral support for said vertical portions of said storage node; and wherein said silicon nitride layer has a thickness of about 70 Å and said HTO layer has a thickness in a range between about 500 Å and 1500 Å.
 2. The DRAM cell capacitor according to claim 1, wherein said rough layer comprises an HSG layer. 